Panasonic MA4X160A Specification Sheet

Switching Diodes
MA4X160A
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Centrosymmetrical wiring, allowing to free from the taping
direction
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Single
Forward current
(Average)
Series
Single
Repetitive peak
forward current
Series
Single
Non-repetitive peak
*
forward surge current
Series
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA160A)
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RRM
I 100
F(AV)
75
I 225
FRM
170
I 500
FSM
375
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I = 100 mA
F F
= 100 µA
V I
R R
I V = 75 V
R R
C V = 0 V, f = 1 MHz
t R
t I = 10 mA, V
rr F
I = 0.1 I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
SKF00045CED
(0.2)
+0.10
0.60
–0.05
10˚
Unit
V
V
mA
EIAJ: SC-61
Marking Symbol: M1E
mA
Internal Connection
mA
°C
°C
Conditions
= 6 V
R
= 100 Ω
, R
R L
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Unit: mm
+0.20
2.90
–0.05
1.9 ±0.2
+0.10
0.16
(0.95) (0.95)
–0.06
3 4
0.5R
2 1
+0.10
0.40
–0.05
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Mini4-G1 Package
3 4
2 1
Min Typ Max
0.95 1.20
80
0.1
0.9 2.0
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit
V
V
µA
pF
ns
1