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Panasonic 2SA1532 Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SA1532
 T
P
C
a
200
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
Ambient temperature T
 I
h
FE
C
120
100
= 75°C
T
a
80
25°C
−25°C
60
40
20
0
− 0.1
−1
−10
Collector current I
C
 I
f
T
E
600
500
400
300
200
100
0
0.1
1
10
Emitter current I
E
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−30
−25
−20
−15
−10
−5
0
120
140
160
0
( °C )
Collector-emitter voltage V
a
6
= −10 V
V
CE
5
4
3
2
1
0
−100
− 0.1
( mA )
Collector-base voltage V
24
= −10 V
V
CB
= 25°C
T
a
20
16
12
8
4
0
− 0.1
100
( mA )
Collector current I
 V
I
C
CE
= 25°C
T
a
= −250 µA
I
B
−200 µA
−150 µA
−100 µA
−50 µA
−2
−4
−6
−8
−10
( V )
CE
 V
C
ob
CB
f = 1 MHz
= 0
I
E
= 25°C
T
a
−1
−10
−100
( V )
CB
 I
G
P
C
= −10 V
V
CE
f = 100 MHz
= 25°C
T
a
−1
−10
−100
( mA )
C
SJC00021BED
 I
V
CE(sat)
C
−100
I
C
−10
−1
= 75°C
T
a
25°C
−25°C
− 0.1
− 0.01
− 0.1
−1
−10
( mA )
Collector current I
C
 V
C
re
CE
5
= −1 mA
I
C
f = 10.7 MHz
= 25°C
T
a
4
3
2
1
0
−1
−10
Collector-emitter voltage V
NF  I
E
5
V
CB
f = 100 MHz
= 25°C
T
a
4
3
2
1
0
0.1
1
( mA )
Emitter current I
E
= 10
/ I
B
−100
−100
( V )
CE
= −10 V
10

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