Panasonic 2SA2028 Specification Sheet

Transistors
2SA2028
Silicon PNP epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
• High-speed switching
• S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−20
V
CBO
−20
V
CEO
−5
V
EBO
−1
I
C
−3
I
CP
P 150
C
T 150
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V I
CBO C
= −1 mA, I
V I
CEO C
= −10 µA, I
V I
EBO E
= −2 V, I
h V
FE CE
= −200 mA, I
V I
CE(sat) C
= −10 V, I
f V
T CB
C V
ob CB
SJC00042BED
Unit
10˚
V
V
V
A
A
Marking Symbol: AT
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −100 mA
C
= −10 mA
B
= 10 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
+0.1
0.3
–0.0
3
1 2
(0.65) (0.65)
1.3 ±0.1
2.0 ±0.2
SMini3-G1 Package
Min Typ Max
−20
−20
−5
160 560
−40 −100
170
20 30
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V

mV
MHz
pF
1