Panasonic 2SC1318A Specification Sheet

Transistors
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
V 80
CBO
V 70
CEO
V 5
EBO
I 0.5
C
I 1
CP
P 750
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 2 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
* 1 * 2
h V
FE1 CE
h V
FE2 CE
= 300 mA, I
V I
CE(sat) C
= 300 mA, I
V I
BE(sat) C
f V
T CB
C V
ob CB
Q R
85 to 170 120 to 240
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 20 V, I = 0
E
= 10 V, I = 150 mA
C
= 10 V, I = 500 mA
C
= 30 mA
B
= 30 mA
B
= 10 V, I = −50 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
S
170 to 340
SJC00101BED
5.0 ±0.2
0.7 ±0.1
+0.15
0.45 0.45
–0.1
+0.6 +0.6
2.5 2.5
–0.2 –0.2
1 2 3
TO-92-B1 Package
Min Typ Max
80
70
5
0.1
85 340
40
0.2 0.6
0.85 1.50
120
11 20
Unit: mm
4.0 ±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
Unit
V
V
V
µA


V
V
MHz
pF
1