Transistors
2SC6036G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162G
Features
Low collector-emitter saturation voltage V
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
15
CBO
V
12
CEO
V
5
EBO
I
500
C
I
1
CP
P
100
C
T
125
j
T
–55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= 10 mA, I
CBO
C
V
I
= 1 mA, I
CEO
C
V
I
= 10 mA, I
EBO
E
I
V
= 10 V, I
CBO
CB
h
V
= 2 V, I
FE
CE
V
I
= 200 mA, I
CE(sat)
C
f
V
= 2 V, I
T
CB
C
V
= 10 V, f = 1 MHz
ob
CB
SJC00402AED
Package
Code
SSSMini3-F2
Marking Symbol: 4U
Pin Name
1: Base
2: Emitter
Unit
3: Collector
V
V
V
mA
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 10 mA
C
= 10 mA
B
= –10 mA, f = 200 MHz
–10 mA, f = 200 MHz
10 mA, f = 200 MHz
E
Min
Typ
Max
Unit
15
12
5
0.1
270
680
250
mV
200
MHz
4.5
V
V
V
mA
pF
1