Panasonic MA21D340G Specification Sheet

Schottky Barrier Diodes (SBD)
MA21D340G
Silicon epitaxial planar type
For rectification
 Features
 Forward current (Average) I
F(AV)
 Low forward voltage V
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: August 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 1.0 A rectification is possible
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 1.0
F(AV)
* I 20
FSM
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 0.7 A
F1 F
V I = 1.0 A
F2 F
I V = 30 V
R R
C V = 10 V, f = 1 MHz
t R
I = I
F R
t
rr
R = 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKH00161CED
 Package
 Code
SMini2-F2
 Pin Name
1: Anode
2: Cathode
Unit
V
 Marking Symbol: 4V
V
A
A
°C
°C
Conditions
= 100 mA, I = 10 mA,
rr
Input Pulse
t
t
r p
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
Min Typ Max
0.33 0.36
0.35 0.38
1 200
45
14
Output Pulse
t
I rr
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit
V
mA
pF
ns
1