Panasonic MA3U649 Specification Sheet

Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
• Small U-type package for surface mounting
• Low-loss type with fast reverse recovery time t
• Cathode common dual type
■ Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Forward current (Average)
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
= 25°C
Note) * 1: T
C
* 2: Half sine-wave; 10 ms/cycle
■ Electrical Characteristics T
Parameter
Forward voltage
Repetitive peak reverse current
* 2
Reverse recovery time
* 1
Thermal resistance (j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
= 25°C
2. * 1: T
C
* 2: t measurement circuit
rr
50 Ω
Publication date: February 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
Symbol Rating
V 200
RRM
V 200
RSM
* 1
I 5
F(AV)
I 40
FSM
−40 to +150
T
j
−40 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
RRM1
I V
RRM2
t I
rr F
R
th(j-c)
50 Ω
D.U.T
5.5 Ω
■ Package
• Code
• Pin Name
Unit
V
V
A
A
°C
°C
Conditions
= 2.5 A, T = 25°C
C
= 200 V, T = 25°C
RRM C
= 200 V, T = 150°C
RRM j
= 1 A, I = 1 A
R
I
F
I
R
SKJ00014CED
U-G2
1: Anode
2: Cathode (Common)
3: Anode
Min Typ
t
rr
0.1 × I
R
Max Unit
0.98 V
µA
20
2 mA
30 ns
°C/W
12.5
1