Schottky Barrier Diodes (SBD)
MA3X703
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
• Small reverse current I
products)
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA10703)
= 500 mA rectification is possible
F(AV)
(About 1/10 of I
of the ordinary
R
R
= 25°C
a
Symbol
Rating
V
20
R
V
20
RRM
I
500
F(AV)
I
3
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R1
R
I
V
R2
R
C
V
t
R
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
Unit
V
V
mA
EIAJ: SC-59
A
Marking Symbol: M4R
°C
Internal Connection
°C
Conditions
= 500 mA
= 10 mA
= 10 V
= 5 V
= 0 V, f = 1 MHz
= I
= 100 mA
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00072CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
0.50
0.55
0.30
0.40
60
5
Output Pulse
t
rr
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
10
1
pF
ns
1