Schottky Barrier Diodes (SBD)
MA4SD05X
Silicon epitaxial planar type
For high-speed switching circuits
Features
Features
Two isolated elements are contained in one package, allowing high-density
Two isolated elements are contained in one package, allowing high-density
mounting
Optimum for high frequency rectifi cation because of its short reverse recovery
Optimum for high frequency rectifi cation because of its short reverse recovery
time t
time t
time t
rr
rr
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
* 1
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Value for single diode
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t
measurement circuit
measurement circuit
rr
rr
rr
Publication date: December 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
45
R
V
V
V
45
RM
RM
I
100
F
I
300
FM
* 1, 2
I
1
FSM
T
T
T
125
j
j
T
T
T
–55 to +125
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 1 mA
F1
F1
F
V
V
V
I
= 10 mA
F2
F2
F
V
V
V
I
= 100 mA
F3
F3
F
I
V
= 40 V
= 40 V
R
R
R
R
C
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t
R
R
R
I
= I
= 100 mA, I
= 100 mA, I
F
R
R
R
t
t
t
rr
rr
R
R
R = 100
= 100
L
L
L
L
SKH00144AED
Unit
5°
V
V
mA
1: Anode 1
mA
2: Anode 2
3: Cathode 2
A
4: Cathode 1
°C
Marking Symbol: M5C
°C
Internal Connection
Conditions
= 10 mA
= 10 mA
rr
rr
rr
Ω
Unit: mm
1.6
±0.05
1.0
±0.05
0.55
±0.1
4
3
1
2
0.25
±0.05
0.10
±0.03
SSMini4-F1 Package
4
3
1
2
Min
Typ
Max
0.27
0.35
0.54
0.60
5
12
18
2.0
Unit
V
µA
pF
ns
1