Panasonic MA5J002E Specification Sheet

Switching Diodes
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■ Features
• Includes 4 elements of cathode common connection
• Parts reduction is possible
• Ideal for surge voltage absorption
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
* 1
Peak forward current
Non-repetitive peak forward
* 1, 2
surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note) * 1: Value in single diode used.
* 2: t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
I 225
FM
I 500
FSM
T 150
j
−25 to +105
T
opr
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
= 75 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= 10 mA, V
t I
rr F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00061BED
(0.65) (0.65)
5
1
5˚
Unit
V
V
mA
mA
mA
Marking Symbol: M5B
°C
°C
Internal Connection
°C
Conditions
= 6 V
R
= 100 Ω
, R
R L
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Unit: mm
2.0 ±0.1
4
2 3
0.2 ±0.05
1: Anode 1 3: Anode 2
2: Cathode 1, 2, 3, 4 4: Anode 3
5: Anode 4
SMini5-F 1 Package
5 4
1 2 3
Min Typ Max
1.2
80
100
2
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
0.7 ±0.1
+0.1
0.16
–0.06
Unit
V
V
nA
pF
ns
1