Panasonic MA6X125 (MA125) Specifications

Switching Diodes
MA6X125
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package, allowing high-
density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
*
Forward current
*
Peak forward current
Junction temperature
Storage temperature
Note) * : Value for single diode
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
* 3
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * 1: Between pins 1 and 6, Between pins 3 and 5
* 2: Between pins 2 and 6, Between pins 3 and 4
* 3: t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA125)
= 25°C
a
Symbol Rating
V 40
R
V 40
RM
I 100
F
I 200
FM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
V I
R R
I V
R R
C V
t R
* 1 = 10 mA, V
t I
rr1 F
* 2
t I
rr2 rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
10˚
Unit
V
V
mA
EIAJ: SC-74
mA
Marking Symbol: M2I
°C
°C
Internal Connection
Conditions
= 100 µA
= 40 V
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00055BED
+0.20
2.90
–0.05
1.9 ±0.1
(0.95) (0.95)
4 5 6
3 2 1
+0.10
0.30
–0.05
+0.10
0.50
–0.05
Mini6-G1 Package
4 5 6
3 2 1
Min Typ Max
1.2
40
100
5.0
150
9
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Cathode 1
2: Anode 2
3: Cathode 3
Anode 4
4: Anode 3
5: Cathode 4
6: Anode 1
Cathode 2
Unit
V
V
nA
pF
ns
1