Panasonic MALS068G Specification Sheet

Zener Diodes
MALS068G
Silicon planar type
For ESD protection
 Overview
MALS068G is optimal for cell phones and AV application, all types of
I/O circuits.
 Features
 High resistance to surge voltages: 30 kV guaranteed
 Low terminal capacitance C
retention of signal waveforms.
 Absolute Maximum Ratings T
Parameter
* 1
Total power dissipation
* 2
Electrostatic discharge
Junction temperature
Storage temperature
Note) * 1: P = 150 mW achieved with a printed circuit board.
T
* 2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
 Electrical Characteristics T
Parameter
Breakdown voltage *
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : V guaranted 20 ms after current flow.
BR
The temperature must be controlled 25°C for V
V value measured at other temperature must be adjusted to V
BR
Publication date: April 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
for low loss, low distortion, and good
t
= 25°C
a
Symbol Rating
P 150
T
ESD ±30
T 150
j
T -55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 1 mA
BR R
I V = 4 V
R R
C V = 0 V, f = 1 MHz
t R
measurement.
BR
SKE00042AED
 Package
 Code
SSMini2-F4
 Pin Name
1: Anode
2: Cathode
 Marking Symbol: RE
Unit
mW
kV
°C
°C
Conditions
(25°C).
BR
Min Typ Max Unit
6.4 6.8 7.2
0.5
50
V
mA
pF
1