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Panasonic 2SD1450 Specification Sheet

Panasonic 2SD1450 Specification Sheet

Transistors

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Transistors
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage V
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
* 3
ON resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
* 3: R
Measurement circuit
on
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
25
CBO
V
20
CEO
V
12
EBO
I
0.5
C
I
1
CP
P
300
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V
I
CBO
C
= 1 mA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
* 1
* 2
h
V
FE1
CE
h
V
FE2
CE
= 500 mA, I
* 1
V
I
CE(sat)
C
* 1
= 500 mA, I
V
I
BE(sat)
C
f
V
T
CB
C
V
ob
CB
R
on
R
S
200 to 350
300 to 500
1 kΩ
= 1 mA
I
B
V
V
V
B
V
A
V
=
B
× 1 000 (Ω)
R
on
− V
V
A
B
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 25 V, I
= 0
E
= 2 V, I
= 0.5 A
C
= 2 V, I
= 1 A
C
= 20 mA
B
= 20 mA
B
= 10 V, I
= −50 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
T
No rank
400 to 800
200 to 800
f = 1 kHz
V = 0.3 V
SJC00222BED
4.0
±0.2
2.0
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Min
Typ
Max
25
20
12
100
200
800
60
0.13
0.40
1.2
200
10
0.6
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
nA
V
V
MHz
pF
1

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Summary of Contents for Panasonic 2SD1450

  • Page 1 Transistors 2SD1450 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping • Low collector-emitter saturation voltage V ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open)
  • Page 2 2SD1450  T ( °C ) Ambient temperature T  I BE(sat) = 10 25°C = −25°C 75°C 0.01 0.01 ( A ) Collector current I  V f = 1 MHz = 25°C Collector-base voltage V ( V ) ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.