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Model 5501A
Replaceable Parts
I
ABBREVIATIONS (CONTINUED)
ENCAP
= encapsulated
min
=
mlnute (time)
PIV
= peak inverse voltage
TFT
= thin-film transistor
EXT
= external
= minute (plane angle)
pk
= peak
TGL
=
toggle
F
= farad
MlNAT
=
miniature
PL
= phase lock
THD
= thread
FET
= field-effect transistor
mm
= millimeter
PLO
= phase lock oscillator
THRU
= through
FIF
= flip-flop
MOD
= modulator
PM
=
phase modulation
TI
=titanium
FH
= flat head
MOM
=
momentary
PNP
= positive-negative-
TOL
= tolerance
FOL H
= fillister head
MOS
= metal-oxide semi-
positive
TRIM
=trimmer
FM
=
frequency modulation
conductor
P I 0
= part of
TSTR
= transistor
FP
= front panel
ms
= millisecond
POLY
=
polystyrene
TTL
=
transistor-transistor
FREQ
= frequency
MTG
= mounting
PORC
=
porcelain
logic
FXD
= fixed
MTR
= meter (indicating
POS
= positive; position(s)
TV
=
television
B
= gram
device)
(used in parts list)
TVI
=
television interference
GE
= germanium
mV
= m~llivolt
POSN
=
position
TWT
=traveling wave tube
GHz
= gigahertz
mVac
=
millivolt, ac
POT
=
potentiometer
U
= micro (lo-') (used in
GL
= glass
mVdc
= millivolt, dc
P-P
=
peak-to-peak
parts list)
GND
= ground(ed)
mVpk
=
millivolt, peak
PP
=
peak-to-peak (used in
UF
= microfarad (used in
H
= henry
mVp-p
=
millivolt. peak-to-peak
parts list)
parts list)
h
=
hour
mVrms
= millivolt, rms
PPM
= pulse-position
UHF
=
ultrahigh frequency
HET
= heterodyne
mW
=
milliwatt
modulation
UNREG
=
unregulated
HEX
= hexagonal
MUX
= multiplex
PREAMPL = preamplifier
V
=
volt
HD
=
head
MY
= mylar
PRF
=
pulse-repetition
V A
=
voltampere
HDW
=
hardware
PA
=
microampere
frequency
Vac
=
volts ac
HF
= h ~ g h frequency
PF
=
microfarad
PRR
= pulse repetition rate
VAR
=
variable
HG
= mercury
PH
= microhenry
P S
=
picosecond
VCO
=
voltage-controlled
HI
= high
pmho
=
micromho
PT
= point
oscillator
HP
=
Hewlett-Packard
f i s
= microsecond
PTM
= pulse-time modulatton
Vdc
= volts dc
HPF
= hlgh pass filter
P v
=
microvolt
PWM
=
pulse-width modulation
VDCW
= volts dc. working (used
HR
= hour (used in parts list)
pVac
=
microvolt, ac
PWV
=
peak working voltage
in parts list)
HV
= h ~ g h voltage
pVdc
= microvolt, dc
RC
= resistance capacitance
V(F)
=
volts. filtered
Hz
=
Hertz
~ V p k
= microvolt. peak
RECT
= rectifier
VFO
= variable-frequency
IC
=
integrated circult
pVp-p
=
microvolt. peak-to-
REF
= reference
oscillator
ID
=
inside diameter
peak
REG
=
regulated
VHF
=
very-high frequency
IF
= intermediate frequency
pVrms
= microvolt. rms
REPL
= replaceable
VPk
=
volts peak
IMPG
= impregnated
P w
= microwatt
RF
= rad~o frequency
Vp-p
= Volts peak-to-peak
in
= inch
n A
= nanoampere
RFI
= rad~o frequency
Vrms
=
volts rms
INCD
=
incandescent
NC
= no connection
interference
VSWR
= voltage standing wave
INCL
=
include(s)
NIC
= normally closed
RH
=
round head: right hand
ratio
INP
=
input
NE
= neon
RLC
=
resistance-inductance-
VTO
=
voltage-tuned oscillator
INS
=
insulation
NEG
=
negative
capacitance
V N M
= vacuum-tube voltmeter
INT
=
internal
nF
=
nanofarad
RMO
=
rack mount only
v(x)
=
volts. switched
kg
=
kilogram
NI PL
= nickel plate
rms
= root-mean-square
W
= watt
kHz
=
kilohertz
NIO
=
normally open
RND
=round
WI
=with
k!2
= kilohm
NOM
= nomlnal
ROM
=
read-only memory
WIV
=
working Inverse voltage
kV
=
kilovolt
NORM
=normal
RBP
= rack and panel
WW
=
wirewound
I b
= pound
NPN
=
negative-positive-
RWV
=
reverse working voltage
WIO
=without
LC
= inductance-capacitance
negative
S
=
scattering parameter
YIG
= yttrium-iron-garnet
LED
= light-emitting diode
NPO
=
negative-positive zero
s
= second (time)
Zo
= characteristic
LF
= low frequency
(zero temperature
= second (plane angle)
impedance
LG
=
long
coefficient)
S-B
= slow-blow (fuse (used
LH
= left hand
NRFR
= not recommended for
in parts list)
LIM
= limit
field replacement
SCR
=
silicon controlled
LIN
=
linear taper (used in
NSR
=
not separately
rectifier; screw
NOTE
parts list)
replaceable
SE
=
selenium
= linear
ns
= nanosecond
SECT
= sections
All abbreviations in the parts list
lin
will be in upper case.
LK WASH
=
lockwasher
nW
= nanowatt
SEMICON
=
semiconductor
LO
=
low: local oscillator
OBD
= order by description
SHF
= superhigh frequency
LOG
=
logarithmic taper
OD
= outside diameter
SI
= silicon
(used in parts list)
OH
= oval head
SIL
= silver
109
= logarithm(ic)
OP AMPL
=
operational amplifier
SL
=
slide
LPF
= low pass filter
OPT
=option
SNR
= signal-to-noise ratio
LV
= low voltage
OSC
= oscillator
SPDT
= single-pole, double-
OX
= oxide
MULTIPLIERS
m
=
meter (distance)
throw
m A
=
milliampere
oz
=
ounce
SPG
=
spring
MAX
= max:mum
a
=
ohm
SR
= split ring
Abbmlallon
P d x
Multipk
M
a
= megohm
P
= peak (used in parts
SPST
=
single-pole.
single-
T
tera
10"
MEG
= meg (106) (used in
list)
throw
G
giga
101
parts list)
PAM
= pulse-amplitude
SSB
= single sideband
M
mega
1~
MET FLM
=
metal film
modulation
SST
= stainless steel
k
kilo
llY
MET OX
=
metal oxide
PC
=
printed circuit
STL
= steel
da
deka
10
MF
= medium frequency:
PCM
=
pulse-code moudulation:
SO
=
square
d
deci
lo-'
microfared (used in
pulse-count modulation
SWR
=
standing-wave ratio
c
centi
10-
parts list)
PDM
= pulse-duration
SYNC
=
synchronize
m
milli
10-3
MFR
= manufacturer
modulation
T
=
timed (slow-blow fuse)
C
micro
10-8
mg
=
milligram
PF
= picofarad
T A
=
tantalum
n
nano
10-*
MHz
= megahertz
PH BRZ
=
phosphor bronze
TC
= temperature
P
pic0
lo-"
mH
=
millihenry
PHL
= Phillips
compensating
f
femto
10-'5
mho
= mho
PIN
= positive-instrinsic-
TD
=
time delay
a
atto
MIN
= minimum
negative
TERM
= terminal
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