External Memory Interface; Only For Training And Service Purposes - LG KP330 Service Manual

3.10. External memory interface

The MSM6260 device was designed to provide two distinct memory interfaces. EBI1 was targeted
for supporting high speed synchronous memory devices. EBI2 was targeted towards supporting
slower asynchronous devices such as LCD, NAND flash, SRAM, etc.
EBI1 Features
- 16 bit static and dynamic memory interface
- 32 bit dynamic memory interface
- 24 bits of address for static memory devices which can support up to 32MBytes
on each chip select
- Synchronous burst memories supported (burst NOR, burst PSRAM)
- Synchronous DRAM memories supported
- Byte addressable memory supporting 8 bit, 16 bit and 32 bit accesses
- Pseudo SRAM (PSRAM) memory support
EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices (UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(18 or 16 bit).
1Gb NAND(16bit) flash memory + 512Mb SDRAM (32bit)
1-CS(Chip Select) are used.
Device
FLASH TY9000A800KOGG
SDRAM
TY9000A800KOGG
Copyright © 2008 LG Electronics. Inc. All right reserved.

Only for training and service purposes

Interface Spec
Part Name Maker
Toshiba
Toshiba
Table#1. External memory interface for KP330
KP330 Operational Description
Read Access Time
50 ns
15 ns
- 63 -
3. TECHNICAL BRIEF
Write Access Time
50 ns
15 ns
LGE Internal Use Only