Transistors
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A
Features
Large collector current I
C
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
* 1
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no indication for rank.
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
-60
CBO
V
-50
CEO
V
-5
EBO
I
- 0.5
C
I
-1
CP
P
200
C
T
150
j
T
-55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= -10 mA, I
CBO
C
V
I
= -10 mA, I
CEO
C
V
I
= -10 mA, I
EBO
E
I
V
= -20 V, I
CBO
CB
* 2
h
V
= -10 V, I
FE1
CE
h
V
= -10 V, I
FE2
CE
* 1
V
I
= -300 mA, I
CE(sat)
C
* 1
V
I
= -300 mA, I
BE(sat)
C
f
V
= -10 V, I
T
CB
C
V
= -10 V, I
ob
CB
Q
R
85 to 170
120 to 240
DQ
DR
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Unit
V
Marking Symbol: D
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= -150 mA
C
= -500 mA
C
= -30 mA
B
= -30 mA
B
= 50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S
No-rank
170 to 340
85 to 340
DS
D
SJC00413AED
Min
Typ
Max
Unit
-60
-50
-5
- 0.1
85
340
40
- 0.35
- 0.60
-1.1
-1.5
200
MHz
6
15
V
V
V
mA
V
V
pF
1