Transistors
2SB0792A
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Features
High collector-emitter voltage (Base open) V
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Merking symbol
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol
Rating
V
–185
CBO
V
–185
CEO
V
–5
EBO
I
–50
C
I
–100
CP
P
200
C
T
150
j
T
–55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= –100 mA, I
CEO
C
V
I
= –10 mA, I
EBO
E
I
V
= –100 V, I
CBO
CB
h
V
= –5 V, I
FE
CE
V
I
= –30 mA, I
CE(sat)
C
f
V
= –10 V, I
T
CB
C
V
= –10 V, I
ob
CB
V
= –10 V, I
CB
NV
R
= 100 kΩ, Function = FLAT
g
R
S
130 to 220
185 to 330
2FR
2FS
SJC00417AED
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Unit
Marking Symbol: 2F
V
V
V
mA
mA
mW
°C
°C
Conditions
= 0
–185
B
= 0
C
= 0
E
= –10 mA
C
= –3 mA
B
= 10 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
= –1 mA, G
= 80 dB,
C
V
Min
Typ
Max
Unit
–5
–1
130
330
–1
200
MHz
4
150
mV
V
V
mA
V
pF
1