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Panasonic MA22D17 Specification Sheet
Panasonic MA22D17 Specification Sheet

Panasonic MA22D17 Specification Sheet

Silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
 Features
 Features
 Reverse voltage V
 Reverse voltage V
Reverse voltage V
Reverse voltage V = 100 V is guaranteed
= 100 V is guaranteed
R
R
R
R
 High non-repetitive peak forward surge current: I
 High non-repetitive peak forward surge current: I
 Absolute Maximum Ratings
 Absolute Maximum Ratings
Parameter
Reverse voltage
Repetitive peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics
 Electrical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t
measurement circuit
measurement circuit
rr
rr
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Publication date: December 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
= 20 A
= 20 A
FSM
FSM
FSM
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
100
R
V
V
V
100
RRM
RRM
I
300
F(A V)
* 2
I
20
FSM
T
T
T
125
j
j
T
T
T
–55 to +125
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 300 mA
F
F
F
I
V
= 100 V
= 100 V
R
R
R
R
C
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t
R
R
R
I
= I
F
R
R
R
t
t
t
rr
rr
R
R = 100
R
= 100
L
L
L
L
Bias Application Unit (N-50BU)
A A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
SKH00140AED
Unit
V
V
mA
A
°C
°C
1: Anode
2: Cathode
Marking Symbol: 3T
Conditions
= 100 mA, I
= 100 mA, I
= 10 mA,
= 10 mA,
rr
rr
rr
Input Pulse
t
t
t
t
p
p
r
t
10%
90%
V
R
t
t
t = 2 µs
p
p
t
= 0.35 ns
r
δ = 0.05
Unit: mm
0.80
1.6
±0.05
±0.1
1
2
0.45
±0.1
0.55
±0.1
+0.1
0.16
–0.06
Mini2-F1 Package
Min
Typ
Max
0.49
0.57
70
200
100
7
Output Pulse
t
rr
I
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
0 to 0.1
Unit
V
µA
pF
ns
1

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Summary of Contents for Panasonic MA22D17

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA22D17 Silicon epitaxial planar type For high frequency rectifi cation  Features  Features   Reverse voltage V  Reverse voltage V Reverse voltage V = 100 V is guaranteed...
  • Page 2 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.