Schottky Barrier Diodes (SBD)
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
Features
Features
Reverse voltage V
Reverse voltage V
Reverse voltage V
Reverse voltage V = 100 V is guaranteed
= 100 V is guaranteed
R
R
R
R
High non-repetitive peak forward surge current: I
High non-repetitive peak forward surge current: I
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Reverse voltage
Repetitive peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t
measurement circuit
measurement circuit
rr
rr
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Publication date: December 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
= 20 A
= 20 A
FSM
FSM
FSM
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
100
R
V
V
V
100
RRM
RRM
I
300
F(A V)
* 2
I
20
FSM
T
T
T
125
j
j
T
T
T
–55 to +125
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 300 mA
F
F
F
I
V
= 100 V
= 100 V
R
R
R
R
C
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t
R
R
R
I
= I
F
R
R
R
t
t
t
rr
rr
R
R = 100
R
= 100
L
L
L
L
Bias Application Unit (N-50BU)
A A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
SKH00140AED
Unit
V
V
mA
A
°C
°C
1: Anode
2: Cathode
Marking Symbol: 3T
Conditions
= 100 mA, I
= 100 mA, I
= 10 mA,
= 10 mA,
rr
rr
rr
Ω
Input Pulse
t
t
t
t
p
p
r
t
10%
90%
V
R
t
t
t = 2 µs
p
p
t
= 0.35 ns
r
δ = 0.05
Unit: mm
0.80
1.6
±0.05
±0.1
1
2
0.45
±0.1
0.55
±0.1
+0.1
0.16
–0.06
5°
Mini2-F1 Package
Min
Typ
Max
0.49
0.57
70
200
100
7
Output Pulse
t
rr
I
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
0 to 0.1
Unit
V
µA
pF
ns
1