Panasonic MA22F20 Specification Sheet

Fast Recovery Diodes (FRD)
MA22F20
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Super high speed switching characteristic (t
 At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
 Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
* 1
Forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: November 2007
This product complies with RoHS Directive (EU 2002/95/EC).
= 8 ns typ.)
rr
= 25°C
a
Symbol Rating
V 200
RRM
V 200
RSM
I 1.0
F
* 2
I 15
FSM
T –40 to +150
j
T –40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 1.0 A
F F
I V = 200 V
RRM RRM
C V = 0 V, f = 1 MHz
t R
I = 0.5 A, I
F
t
rr
I = 0.25 A
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKJ00017AED
 Package
 Code
Mini2-F1
 Pin Name
1: Anode
2: Cathode
 Marking Symbol: FB
Unit
V
V
A
A
°C
°C
Conditions
= 1 A
R
Input Pulse
t t
r p
t
10%
I
F
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
Min Typ Max
0.85 0.98
20
45
8 35
Output Pulse
t
rr
t
I = 0.1 × I
rr R
I = 100 mA
F
I = 200 mA
R
R = 100 Ω
L
Unit
V
mA
pF
ns
1