Panasonic MA3S1330G Specification Sheet

Switching Diodes
MA3S1330G
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Two diodes are connected in series in the package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Series
Single
Peak forward
current
Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
* 3
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * 1: Between pins 2 and 3
* 2: Between pins 1 and 3
* 3: t measurement circuit
rr
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
65
I 200
FM
130
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
V I
R R
I V
R
* 1
C V
t
* 2
C
t
* 1
t I
rr F
* 2
t I
rr rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
■ Package
• Code
• Pin Name
Unit
V
■ Marking Symbol: MP
V
mA
■ Internal Connection
mA
°C
°C
Conditions
= 100 mA
= 100 µA
= 75 V
R
= 0 V, f = 1 MHz
R
= 10 mA, V = 6 V
R
= 0.1 I = 100 Ω
, R
R L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00086AED
SSMini3-F3
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
3
1 2
Min Typ
80
Input Pulse
t t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t I
p
= 0.35 ns
t V
r
δ = 0.05
R
Max Unit
1.2 V
V
100 nA
5.5 pF
3.0
150 ns
9
Output Pulse
t
rr
t
= 0.1 I
I
rr R
= 10 mA
F
= 6 V
R
= 100 Ω
L
1