Panasonic MA3SE01 Specification Sheet

Schottky Barrier Diodes (SBD)
MA3SE01
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Small junction-capacitance
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Series
Peak forward current Single
Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
F
= 25°C
a
Symbol Rating
V 20
R
V 20
RM
I 35
F
25
I 100
FM
70
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R R
C V
t R
R I
d F
(0.51)
Unit
V
1 : Anode 1
V
2 : Cathode 2
3 : Cathode 1
mA
EIAJ : SC-81
mA
Marking Symbol: M6A
°C
Internal Connection
°C
Conditions
= 1 mA
= 35 mA
= 15 V
= 0 V, f = 1 MHz
= 5 mA
SKH00066CED
0.28 ±0.05
3
1 2
0.28 ±0.05
(0.51)
(0.80) (0.80)
+0.05
1.60
–0.03
3˚
Anode 2
SSMini3-F2 Package
3
1
2
Min Typ Max
0.41
1.0
200
1.2
40
Unit: mm
+0.05
0.12
–0.02
+0.05
0.60
–0.03
Unit
V
V
nA
pF
Ω
1