Panasonic MA3X157A Specification Sheet

Switching Diodes
MA3X157A
Silicon epitaxial planar type
For switching circuits
■ Features
• High switching speed
• Small terminal capacitance C
• Both chips have even characteristics
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Single
Forward current
Series
Single
Peak forward
current
Series
Single
Non-repetitive peak
*
forward surge current
Series
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA157A)
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
65
I 225
FM
145
I 500
FSM
325
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
I V
R R
C V
t R
= 10 mA, V
t I
rr F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKF00038EED
Unit
V
V
mA
EIAJ: SC-59
Marking Symbol: MS
mA
Internal Connection
mA
°C
°C
Conditions
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 100 Ω
, R
R L
Input Pulse
t
t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1 2
Min Typ Max
1.2
80
100
2
3
Output Pulse
t
rr
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode 1
2: Cathode 2
3: Anode 2
Cathode 1
Unit
V
V
nA
pF
ns
1