Panasonic MA3X199 (MA199) Specifications

Switching Diodes
MA3X199
Silicon epitaxial planar type
For high voltage switching circuit
■ Features
• High breakdown voltage: V
• Short reverse recovery time t
• Automatic mounting is possible
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Repetitive peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA199)
= 200 V
R
rr
= 25°C
a
Symbol Rating
V 200
R
V 250
RRM
I 100
F(AV)
I 225
FRM
I 500
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
mA
EIAJ: SC-59
mA
Marking Symbol: M3A
°C
°C
Internal Connection
Conditions
= 100 mA
= 200 V
R
= 0 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
Input Pulse
t t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00042CED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min Typ Max
1.2
1.0
3.0
60
Output Pulse
t
t
rr
I
F
t
= 1mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
ns
1