Panasonic MAS3795E Specification Sheet

Schottky Barrier Diodes (SBD)
MAS3795E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (t
• Low forward voltage V
= < 0.3 V (at I = 1 mA)
V
F F
• SSS-Mini type 3-pin package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC) Single
Double
Peak forward current Single
Double
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: June 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
)
rr
optimum for low voltage rectification
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 30
F
20
I 150
FM
110
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
R R
V I
F1 F
V I
F2 F
C V
t R
t I
rr F
I
rr
η
V
in
R
L
3. * : t
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Unit
V
V
mA
Marking Symbol: M3
mA
Internal Connection
°C
°C
Conditions
= 30 V
= 1 mA
= 30 mA
= 1 V, f = 1 MHz
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
(peak)
= 3.9 kΩ, C = 10 pF
L
measuring instrument
rr
Input Pulse
t
t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t I
p
= 0.35 ns
t I
r
δ = 0.05
R
SKH00118AED
+0.05
0.33
–0.02
3
1 2
+0.05
0.23
–0.02
(0.40) (0.40)
0.80 ±0.05
1.20 ±0.05
5°
SSSMini3-F1 Package
3
1 2
Min Typ Max
1.5
1.0
65
Output Pulse
t
rr
t
= 1 mA
I
rr
= 10 mA
F
= 10 mA
R
= 100 Ω
L
Unit: mm
+0.05
0.10
–0.02
1: Anode 1
2: Anode 2
3: Cathode 1, 2
Unit
µA
30
0.3 V
1.0
pF
ns
%
1