Panasonic MTM86627 Specification Sheet

Multi Chip Discrete
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
 Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
 Features
 Built-in schottky barrier diode: V
 Low on-resistance: R = 80 mW (V
on
 Low short-circuit input capacitance (Common source): C
 Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
 Low drive Voltage: 1.8 V drive
 Absolute Maximum Ratings T
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
FET
Peak drain current
Channel temperature
Storage temperature
Reverse voltage
Forward current (Average)
SBD
Junction temperature
Storage temperature
Overall Total power dissipation
Note) * : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
Absolute maximum rating without heat sink for P
Publication date: March 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 15 V, I = 700 mA
R F
= –4.0 V)
GS
= 300 pF
iss
= 25°C
a
Symbol Rating
V –20
DSS
V ±10
GSS
I –2.0
D
I –8.0
DP
T 150
ch
T –55 to +150
stg
V 15
R
I 700
F(AV)
T 125
j
T –55 to +125
stg
* P 540
D
is 150 mA
D
SJF00085AED
 Package
 Code
WSSMini6-F1
 Pin Name
1: Gate
2: Source
3: Anode
 Marking Symbol: PK
 Internal Connection
Unit
V
V
A
A
°C
°C
V
mA
°C
°C
mW
4: Cathode
5: Drain
6: Drain
(D) (D) (K)
6 5 4
1 2 3
(G) (S) (A)
1