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Toshiba TPC8402 Handbook page 5

Field effect transistor silicon n, p channel mos type (n-mosvi/u-mosii)

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P-ch
R
DS (ON)
500
300
100
V GS = −4 V
50
30
V GS = −10 V
10
5
−0.1
−0.3
−1
Drain current I
5
TPC8402
– I
D
Common source
Ta = 25°C
Pulse test
−3
−10
−30
−100
(A)
D
2006-11-13

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