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Toshiba TPC8402 Handbook page 6

Field effect transistor silicon n, p channel mos type (n-mosvi/u-mosii)

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P-ch
R
DS (ON)
80
Common source
Pulse test
I D = −4.5 A
60
−1.3 A
40
V GS = −4 V
−10 V
20
0
−80
−40
0
Ambient temperature Ta (
P
D
2.0
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(1)
1.5
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(3) SINGLE-DEVICE OPERATION
(2)
(4) SINGLE-DEVICE VALUE AT DUAL
1.0
(3)
(4)
0.5
0
0
50
AMBIENT TEMPERATURE Ta (
– Ta
−2.2 A
I D = −4.5 A, −2.2 A
−1.3 A
40
80
120
160
C)
°
– Ta
(NOTE 2a)
(NOTE 3b)
(NOTE 2b)
(NOTE 3a)
OPERATION
(NOTE 3b)
t = 10 s
100
150
200
C)
°
6
TPC8402
2006-11-13

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