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Philips Semiconductors
VHF push-pull power MOS transistor
20
handbook, halfpage
G p
(dB)
10
0
0
100
Class-AB operation; V
= 50 V; I
DS
Z
= 0.74 + j2
(per section); R
L
(1) T
= 25 C.
h
(2) T
= 70 C.
h
Fig.18 Power gain as a function of load power;
typical values.
400
handbook, halfpage
P L
(W)
300
200
100
0
0
5
Class-AB operation; V
= 50 V; I
DS
Z
= 0.74 + j2
(per section); R
L
(1) T
= 25 C.
h
(2) T
= 70 C.
h
Fig.20 Load power as a function of input power;
typical values.
2003 Sep 19
MGE614
(1)
(2)
200
P L (W)
= 2
0.5 A; f = 225 MHz;
DQ
= 2.8
(per section).
GS
MGE613
(1)
(2)
10
P i (W)
= 2
0.5 A; f = 225 MHz;
DQ
= 2.8
(per section).
GS
60
handbook, halfpage
D
(%)
40
20
0
300
Class-AB operation; V
Z
= 0.74 + j2
L
(1) T
h
(2) T
h
Fig.19 Efficiency as a function of load power;
15
14
(1)
(2)
0
100
= 50 V; I
= 2
DS
DQ
(per section); R
= 2.8
GS
= 25 C.
= 70 C.
typical values.
Product Specification
BLF278
MGE612
200
300
P L (W)
0.5 A; f = 225 MHz;
(per section).
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