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Philips Semiconductors
VHF push-pull power MOS transistor
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS
Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
QUICK REFERENCE DATA
RF performance at T
= 25 C in a push-pull common source test circuit.
h
MODE OF OPERATION
CW, class-B
CW, class-C
CW, class-AB
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 19
CAUTION
f
(MHz)
108
108
225
PINNING - SOT262A1
PIN
1
2
3
4
5
1
5
3
Top view
Fig.1 Simplified outline and symbol.
V
P
DS
L
(V)
(W)
50
300
50
300
50
250
WARNING
2
Product Specification
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source
2
5
4
MAM098
G
p
(dB)
>20
typ. 18
>14
typ. 16
BLF278
d
g
s
g
d
D
(%)
>60
typ. 80
>50
typ. 55
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