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Philips Semiconductors
Triacs
THERMAL RESISTANCES
SYMBOL PARAMETER
R
Thermal resistance
th j-mb
junction to mounting base half cycle
R
Thermal resistance
th j-a
junction to ambient
STATIC CHARACTERISTICS
T
= 25 ˚C unless otherwise stated
j
SYMBOL PARAMETER
I
Gate trigger current
GT
I
Latching current
L
I
Holding current
H
V
On-state voltage
T
V
Gate trigger voltage
GT
I
Off-state leakage current
D
DYNAMIC CHARACTERISTICS
T
= 25 ˚C unless otherwise stated
j
SYMBOL PARAMETER
dV
/dt
Critical rate of rise of
D
off-state voltage
dV
/dt
Critical rate of change of
com
commutating voltage
t
Gate controlled turn-on
gt
time
August 1997
CONDITIONS
full cycle
in free air
CONDITIONS
BT136-
V
= 12 V; I
= 0.1 A
D
T
T2+ G+
T2+ G-
T2- G-
T2- G+
V
= 12 V; I
= 0.1 A
D
GT
T2+ G+
T2+ G-
T2- G-
T2- G+
V
= 12 V; I
= 0.1 A
D
GT
I
= 5 A
T
V
= 12 V; I
= 0.1 A
D
T
V
= 400 V; I
= 0.1 A;
D
T
T
= 125 ˚C
j
V
= V
;
D
DRM(max)
T
= 125 ˚C
j
CONDITIONS
BT136-
V
= 67% V
;
DM
DRM(max)
T
= 125 ˚C; exponential
j
waveform; gate open
circuit
V
= 400 V; T
= 95 ˚C;
DM
j
I
= 4 A;
T(RMS)
dI
/dt = 1.8 A/ms; gate
com
open circuit
I
= 6 A; V
= V
;
TM
D
DRM(max)
I
= 0.1 A; dI
/dt = 5 A/ s
G
G
2
MIN.
TYP.
-
-
-
MIN.
TYP.
MAX.
...
-
5
35
-
8
35
-
11
35
-
30
70
-
7
20
-
16
30
-
5
20
-
7
30
-
5
15
-
1.4
1.70
-
0.7
0.25
0.4
-
0.1
MIN.
TYP.
...
...F
...G
100
50
200
250
-
-
10
-
-
-
Product specification
BT136 series
MAX.
UNIT
-
3.0
K/W
-
3.7
K/W
60
-
K/W
UNIT
...F
...G
25
50
mA
25
50
mA
25
50
mA
70
100
mA
20
30
mA
30
45
mA
20
30
mA
30
45
mA
15
30
mA
V
1.5
V
-
V
0.5
mA
MAX.
UNIT
-
V/ s
50
-
V/ s
2
-
s
Rev 1.200
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