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Philips Semiconductors
Triacs
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50
0
Fig.7. Normalised gate trigger current
I
(T
)/ I
(25˚C), versus junction temperature T
GT
j
GT
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50
0
Fig.8. Normalised latching current I
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50
0
Fig.9. Normalised holding current I
versus junction temperature T
August 1997
BT136
T2+ G+
T2+ G-
T2- G-
T2- G+
50
100
150
Tj / C
j
TRIAC
50
100
150
Tj / C
(T
)/ I
(25˚C),
L
j
L
.
j
TRIAC
50
100
150
Tj / C
(T
)/ I
(25˚C),
H
j
H
.
j
IT / A
12
Tj = 125 C
Tj = 25 C
10
Vo = 1.27 V
Rs = 0.091 ohms
8
6
4
2
0
0
0.5
Fig.10. Typical and maximum on-state characteristic.
.
Zth j-mb (K/W)
10
1
0.1
0.01
10us
0.1ms
Fig.11. Transient thermal impedance Z
dVcom/dt (V/us)
1000
100
10
dIcom/dt = 5.1
1
0
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
4
Product specification
BT136 series
BT136
typ
max
1
1.5
2
2.5
VT / V
BT136
unidirectional
bidirectional
t
P
p
D
1ms
10ms
0.1s
1s
tp / s
th j-mb
pulse width t
.
p
off-state dV/dt limit
BT136...G SERIES
BT136 SERIES
BT136...F SERIES
3.9
3
2.3
1.8
1.4
A/ms
50
100
Tj / C
/dt. The triac
T
3
t
10s
, versus
150
/dt.
T
Rev 1.200
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