Panasonic Phototransistors PNA1803L Specifications

Phototransistors
PNA1803L
Silicon planar type
For optical control systems
 Features
 Fast response
 Wide spectral sensitivity characteristics
 φ3 plastic package
 Absolute Maximum Ratings T
Parameter
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation *
Operating ambient temperature
Storage temperature
 Electrical-Optical Characteristics T
Parameter
* 1
Photocurrent
Collector-emitter cutoff current (Base open)
Peak sensitivity wavelength
Half-power angle
* 2
Rise time
* 2
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. * 1: Source: Tungsten lamp (color temperature 2 856K)
* 2: Switching time measurement circuit
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
= 25°C±3°C
a
Symbol
I
L
I
CEO
λ
PD
θ
t
r
t
f
Sig. in V
CC
Sig. out
50 Ω
R
L
Rating Unit
20 V
5 V
20 mA
50 mW
–25 to +85 °C
–30 to +100 °C
Conditions
V = 10 V, L = 1 000 lx
CE
V = 10 V
CE
V = 10 V
CE
The angle when the photocurrent is
halved
V = 10 V, I = 1 mA, R = 100 W
CC L L
(Input pulse)
(Output pulse)
t t
r f
SHE00054BED
Min Typ Max
1.0 3.0
1 500
800
30
2.5
3.5
t : Rise time
r
:
t Fall time
90%
f
10%
Unit
mA
nA
nm
°
µs
µs
1