Panasonic Schottky Barrier Diodes MA24D60 Specification Sheet

Schottky Barrier Diodes (SBD)
MA24D60
Silicon epitaxial planar type
For rectification
 Features
 Forward current (Average) I
F(AV)
 Low forward voltage V
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: November 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
= 2.0 A rectification is possible
= 25°C
a
Symbol Rating
V 40
R
V 40
RM
I 2.0
F(A V)
* 2
I 60
FSM
T 150
j
T –40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 2.0 A
F F
I V = 40 V
R R
C V = 10 V, f = 1 MHz
t R
I = I
F R
t
rr
R = 100 Ω
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKH00151AED
Unit
V
V
A
A
°C
°C
1 : Anode
2 : Cathode
Marking Symbol: 5W
Conditions
= 100 mA, I = 10 mA,
rr
Input Pulse
t t
p
r
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
2.40 0.15
±0.10
1
2
1.75
±0.05
5°
TMiniP2-F1 Package
Min Typ Max
0.43 0.48
30 200
90
30
Output Pulse
t
I rr
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit : mm
±0.05
Unit
V
µA
pF
ns
1