Panasonic Schottky Barrier Diodes MA2SD30 Specification Sheet

Schottky Barrier Diodes (SBD)
MA2SD30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: I
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
< 2 µA (at V = 30 V)
R R
.
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
I 100
F(AV)
I 200
FM
I 1
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
R1
I V
R2
V I
F1 F
V I
F2 F
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Unit
V
V
mA
mA
A
°C
Marking Symbol: 8N
°C
Conditions
= 10 V
R
= 30 V
R
= 10 mA
= 100 mA
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
Wave Form
Analyzer
(SAS-8130)
V
R
= 50 Ω
R
i
SKH00130AED
+0.05
0.60
–0.03
+0.05
0.80
–0.03
1
0.01 ±0.01
2
0.30 ±0.05
5˚
SSMini2-F1 Package
Min Typ Max
0.3
2
0.38 0.44
0.51 0.58
9
1
Input Pulse Output Pulse
t
t
p
r
t
10%
I
F
90%
= 2 µs = 100 mA
t I
p F
= 0.35 ns = 100 mA
t I
r R
δ = 0.05 = 100 Ω
R
L
Unit: mm
+0.05
0.12
–0.02
+0
0
–0.05
1: Anode
2: Cathode
Unit
µA
V
pF
ns
t
rr
t
= 10 mA
I
rr
1