Panasonic Schottky Barrier Diodes MA3Z792DG Specifications

Schottky Barrier Diodes (SBD)
MA3Z792DG, MA3Z792EG
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two MA3Z7920G is contained in one package
• Forward current (Average) I
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current Single
Double
Peak forward Single
current Double
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
Note) * 1: Value of each diode in double diodes used.
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA rectification is possible
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
I 100
F
* 1
70
I 300
FM
* 1
200
I 1
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω = 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol
Unit
V
V
mA
■ Internal Connection
mA
A
°C
°C
Conditions
= 100 mA
= 30 V
R
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
Input Pulse
t
t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00215BED
SMini3-F2
MA3Z792DG MA3Z792EG
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
MA3Z792DG: M3Y
MA3Z792EG: M3Z
3
1
1 2
D
Min Typ
20
2
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
3
2
E
Max Unit
0.55 V
µA
15
pF
ns
1