Summary of Contents for Panasonic Schottky Barrier Diodes MA3J745EG
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This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection Features Two elements are contained in one package, allowing highdensity mounting Low forward voltage V , optimum for low voltage rectification ...
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This product complies with the RoHS Directive (EU 2002/95/EC). MA3J745EG V 75°C 25°C = 125°C −20°C –1 –2 ( V ) Forward voltage V T = 30 V −1 −40 ( °C ) Ambient temperature T V = 125°C −1 ( V )
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This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0.02 (0.65) (0.65) 1.30 ±0.10 (5°) SKH00234AED MA3J745EG Unit: mm +0.05 0.13 − 0.02...
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company.