Panasonic Switching Diodes MA36132E Specifications

Switching Diodes
MA36132E
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Two elements are contained in one package, optimum for high-density
mounting
 Short reverse recovery time t
 Small terminal capacitance C
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: t = 1 s
* 2: Value for single diode
 Electrical Characteristics T
Parameter
Forward current
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: September 2006
This product complies with RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
150
I
F
100
340
I
FM
225
750
* 1
I
FSM
500
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 100 mA
F F
V I = 100 mA
R R
I V = 75 V
R R
C V = 0, f = 1 MHz
t R
I = 10 mA, V
F
t
rr
R = 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
3
Unit
V
V
mA
* 2
1: Anode 1
2: Anode 2
mA
3: Cathode 1, 2
* 2
Marking Symbol: A2
mA
* 2
Internal Connection
°C
°C
Conditions
= 6 V, I = 0.1 I ,
R rr R
Input Pulse
t t
r p
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
SKF00069AED
2
1
0.39 +0.01
1.00
±0.05 −0.03
0.25 0.25
±0.05
3
0.65
±0.01
ML3-N2 Package
1
3
2
Min Typ Max
1.2
80
100
2
3
Output Pulse
t
t
rr
I
F
t
I = 0.1 I
rr R
I = 10 mA
F
V = 6 V
R
R = 100 Ω
L
Unit: mm
0.01
±0.005
±0.05
1
2
0.05
±0.03
Unit
V
V
nA
pF
ns
1