Transistors
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
• High forward current transfer ratio h
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
−100
I
C
−200
I
CP
P
125
C
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
h
V
FE
CE
* 1
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Unit
V
V
V
mA
mA
Marking Symbol: A
mW
°C
°C
Conditions
= −10 µA, I
= 0
E
= −100 µA, I
= 0
B
= −10 µA, I
= 0
C
= −20 V, I
= 0
E
= −10 V, I
= 0
E
= −10 V, I
= −2 mA
C
= −100 mA, I
= −10 mA
B
= −10 V, I
= 1 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
SJC00087CED
+0.05
1.60
–0.03
0.12
1.00
±0.05
3
1
2
0.27
±0.02
(0.50)(0.50)
5˚
SSMini3-F1 Package
Min
Typ
Max
−60
−50
−7
− 0.1
−100
160
460
− 0.3
− 0.5
80
2.7
Unit: mm
+0.03
–0.01
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
Unit
V
V
V
µA
µA
V
MHz
pF
1