Panasonic Transistors 2SD1819G Specifications

Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
CE(sat)
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V
EBO
I 100
C
I 200
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE1 CE
h V
FE2 CE
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
160 to 260 210 to 340
ZQ ZR
■ Package
• Code
• Marking Symbol: Z
• Pin Name
Unit
V
V
7 V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 2 mA, I = 0
B
= 10 µA, I = 0
C
= 20 V, I = 0
E
= 10 V, I = 0
B
= 10 V, I = 2 mA
C
= 2 V, I = 100 mA
C
= 100 mA, I = 10 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
S No rank
290 to 460 160 to 460
ZS Z
SJC00372AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
60
50
7
160
90
0.1
150
3.5
Max Unit
V
V
V
µA
0.1
µA
100

460
0.3 V
MHz
pF
1