Zener Diodes
MALS068X
Silicon planar type
For constant voltage and surge absorption circuits
Features
Features
Bi-directional and high electrostatic discharge ESD
Bi-directional and high electrostatic discharge ESD
Small terminal capacitance C
Small terminal capacitance C
t
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Repetitive peak forward current
* 1
Total power dissipation
Junction temperature
Storage temperature
* 2
Electrostatic discharge
Note) * 1 : P
= 150 mW achieved with a printed circuit board.
T
* 2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics
Electrical Characteristics
Parameter
Zener voltage
*
Zener operating resistance
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
V
value measured at other temperature must be adjusted to V
Z
3. * : V
guaranted 20 ms after current fl ow.
Z
Publication date: April 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25
= 25
°C
a
a
a
Symbol
Rating
I
200
FRM
P
150
T
T
T
T
150
j
j
T
T
T
–55 to +150
stg
stg
ESD
±15
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 5 mA
= 5 mA
Z
Z
Z
Z
Z
R
R
R
I
= 5 mA
= 5 mA
Z
Z
Z
Z
Z
I
V
= 4.0 V
= 4.0 V
R
R
R
R
C
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t
R
R
R
mesurement.
Z
Z
SKE00022CED
0.80
Unit
mA
5°
mW
°C
°C
kV
1 : Cathode
2 : Cathode
EIAJ : SC-79
Marking Symbol: RX
Internal Connection
Conditions
(25°C)
Unit : mm
+0.05
0.60
–0.03
+0.05
0.12
+0.05
–0.02
–0.03
1
0.01
±0.01
2
0.30
±0.05
+0
0
–0.05
SSMini2-F1 Package
1
2
Min
Typ
Max
Unit
6.5
7.0
7.5
20
50
nA
15
pF
V
Ω
1