Advertisement
Philips Semiconductors
1.3GHz low voltage fractional-N synthesizer
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
Digital supply voltage
DD
V
Analog supply voltage
DDCP
V
–V
Difference in voltage between V
DDCP
DD
V
Voltage at pins 1, 2, 5, 6, 11 to 16
n
V
Voltage at pin 8, 9
1
V
Difference in voltage between GND
GND
be connected together)
T
Storage temperature
stg
T
Operating ambient temperature
amb
T
Maximum junction temperature
j
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
R
Thermal resistance from junction to ambient in free air
th j–a
1999 Nov 04
PARAMETER
V
(V
V
DDCP and
DD
DDCP
DD
and GND (these pins should
CP
PARAMETER
4
MIN.
MAX.
–0.3
+5.5
–0.3
+5.5
)
–0.3
+2.8
–0.3
V
+ 0.3
DD
–0.3
V
DDCP
–0.3
+0.3
–55
+125
–40
+85
150
VALUE
120
Product specification
SA7016
UNIT
V
V
V
V
+ 0.3
V
V
C
C
C
UNIT
K/W
Advertisement
