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Philips Semiconductors
1.3GHz low voltage fractional-N synthesizer
SYMBOL
PARAMETER
Phase noise (R
= 7.5 k , CP=00)
SET
Synthesizer's contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
(f)
Synthesizer's contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
Interface logic input signal levels; pins 13, 14, 15, 16
V
HIGH level input voltage
IH
V
LOW level input voltage
IL
I
Input leakage current
LEAK
Lock detect output signal (in push/pull mode); pin 1
V
LOW level output voltage
OL
V
HIGH level output voltage
OH
NOTES:
V
SET
1. I
bias current for charge pumps.
SET =
R
SET
2. The relative output current variation is defined as:
I
(I
–I
)
OUT
2
1
.
2
; with V
I
I(I
I
)I
OUT
2
1
CURRENT
I
ZOUT
I
2
I
1
I
2
I
1
1999 Nov 04
f
REF
f
COMP
indicative, not tested
f
REF
f
COMP
indicative, not tested
logic 1 or logic 0
I
sink
I
source
0.7V, V
V
–0.8V (See Figure 3.)
1
2
DDCP
V
1
Figure 3. Relative Output Current Variation
CONDITIONS
MIN.
GSM
–
= 13MHz, TCXO,
= 1MHz
TDMA
–
= 19.44MHz, TCXO,
= 240kHz
0.7*V
DD
–0.3
–0.5
=2mA
–
=–2mA
V
–0.4
DD
6
Product specification
SA7016
TYP.
MAX.
UNIT
–90
–
dBc/Hz
–85
–
dBc/Hz
–
V
+0.3
V
DD
–
0.3*V
V
DD
–
+0.5
A
–
0.4
V
–
–
V
V
PH
V
2
SR00602
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