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Handling More Data Even Faster. Supporting Needs for Higher Performance with
Peripheral Components
SANYO's Lineup of High-Reliability
Discrete Devices
Bipolar Transistor for LNA
Low noise, High gain transistors
(f T =20 GHz)
SBFP405M, SBFP420M...etc.
GaAs MMIC products for antenna
switches and local switches
Low insertion loss MMIC /
High isolation MMIC
SPM3211, SPM3212,
SPM3215, SPM3218...etc.
Devices for Li-ion batteries
Ultralow on-resistance MOSFET series
ECH8601, FTD2017A...etc.
Schottky barrier diodes
SBS804...etc.
Junction FETs for ECM
Ultrathin package: VTFP
TF218TH, TF208TH, TF202(SSFP)...etc.
LCD backlight ultralow saturation voltage transistors
Ultralow saturation voltage transistor development roadmap
High performance
3rd Generation
High performance
MBIT-III
2nd Generation
MBIT-II
Low cost
MBIT-IIs
(Single-layer
electrode)
High performance
High
performance/low cost
1st Generation
MBIT
PicoTR surface mounting
MCPH, PCP, and TP leads
package deployment
Package deployment -
Support for hFE1 ranking
High
Compound CPH deployment
performance
Small
PCP
CPH
MCPH ECH SCH
ECSP
2002
2003
2004
2005
2006
34
Devices for CCD camera module
Ultrahigh-frequency transistors
EC3H02B, 2SC5538, 2SC5539...etc.
Schottky barrier diodes
EC2D01B, SB0203EJ...etc.
Bipolar transistor for VCO
Low phase noise transistors
EC3H02B, EC3H09B...etc.
Transistors for LCD backlight circuits
Precise interface control MOSFETs
5LN01S, 5LP01S
MCH6614(2 in 1)...etc.
Complex devices
MCH5809, CPH5809(MOS + SBD)...etc.
Power management switches
Ultralow on-resistance MOSFET series
VEC2301, SCH2602, ECH8603
MCH6307...etc.
Low saturation voltage transistor generation map
4th Generation
High-speed SW
160
MBIT-IV
140
Cell density
65Kcell/inch
2
R CE (sat)
140m
120
100
50%
Cell density
down
2
144cell/inch
80
30%
down
High hFE support - ECSP
¤
package
High voltage (80 V and over)
60
R CE (sat)
- High output support
70m
40
Very low saturation voltage
High switching speed
20
Small and high power package
SOP-WL
Before
1998
2000
1997
1999
2001
2007
h FE =100 to 400, Width=300
h FE =200 to 560, Width=360
h FE =250 to 400, Width=150
[Year]
SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number
of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.
SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data
due to the inclusion of high pixel count cameras in this equipment.
Ultralow on-resistance MOS devices for power management
Low and medium output MOS device development roadmap
Reduced on-resistance/reduced voltage drive
¥ Trench structure (T3/4) deployment
(T3: 10 million, T4: 16 million cells per
square inch)
¥ Shallow trench technology established
¥ High ESD resistance technology
established
Miniaturization
MOSFET
¥ Lineup covering 12 to 200 V
¥ Low on-resistance process
established (T2 trench process)
Added functionality
ExPD
¥ Low Side
¥ Drivers (high voltage/
low voltage)
¥ PicoLogic
TM
2003
Low VF/IR Schottky barrier diodes for power management
Low V
/I
F
High
performance
1st Generation
SBD
Multi Function
30V 0.7A 0.55V
PCP
Befor
1998
Ultra low saturation voltage
Narrow width of h FE
High switching speed
Cell density
2
144cell/inch
Low resistance
of collector layer
R CE (sat)
50m
30%
down
R CE (sat)
35m
2002
2004
2006
2003
2005
[Year]
Device
Device
¥ Trench structure (T4) -> (T5)
High
¥ Increased speed and further
performance
improved ultralow on-resistance
¥ Reduced voltage drive
(from 1.5 to 1.2 V)
¥ Shorter turnaround times
(fewer masks)
MOSFET
¥ Deployment to miniature thin-form
Miniaturization
T4: 16 million cells per
products; VEC8, SCH6, ECSP
square inch)
¥ Wireless package technology
ECH8, TSSOP-WL, FlipFET
¥ Higher power and lower cost
Differentiation
ExPD
Wireless package
¥ Built-in driver MOSFETs
¥ Trench low side
¥ Back gate switches for lithium
Multi Function
battery charging and discharging
¥ High side switches and condenser
microphones for cell phones
High side switches
2004
2005
2006
2007
[Year]
Schottky barrier diode development roadmap
R
New generation
Low V
- Low I
F
R
New structure Schottky
3rd Generation
barrier diode
Low V
- high-density
Low VF - Low IR
2nd Generation
F
sub + Ti barrier
Barrier metal
Low V
+ Ti barrier
F
inspection
Low I
- high-density
R
sub + MO barrier
150¡C
guaranteed
Wireless
Contributes to
Parallel, Twin SBD
Compound
MOS + SBD
product
deployment
TR + SBD
15V 1A 0.4V
SCH
ECH
15V 2A 0.4V 2
15V 1A 0.4V
15V 1A 0.4V
CPH
MCPH
SOP-WL
30V 1A 0.45V
4pin ECSP
1999
2001
2003
2005
2007
2000
2002
2004
2006
[Year]
Ultralow on-resistance MOS device generation map
1998
2000
2002
2004
2005
2006
Cell pitch
100
Design rule
10 m
5 m
3 m
2.5 m
1.8 m
1.3 m
1.1 m
0.8 m
0.55 m
0.35 m
0.25 m
0.18 m
90
270
R DS (on)
Low capacity
80
240
15 m
process
70
210
60
180
50
150
40
120
30
90
R DS (on)
3.2 m
R DS (on)
R DS (on)
20
60
5.3 m
2.8 m
R DS (on)
R DS (on)
2.5 m
10
30
3.8 m
0
0
J5
T1
T2
T3
T4
T5
Low voltage
V GS =4V
2.5V
drive
1.8V
1.5V
V
– I comparison data for earlier and low-V
devices Schottky barrier diodes
F
F
I
F
-V
F
(Comparison with earlier SANYO products)
Low forward voltage
10
Miniature thin-form
Reduced by
package
0.2 V
New Product
SBS010M
1.0
SB10-015C
increased
Earlier Product
efficiency,
0.1
miniaturization,
and thinner
form factors
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
in end products!
V F [V]
35
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