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Handling More Data Even Faster. Supporting Needs for Higher Performance with
Peripheral Components
SANYO's Lineup of High-Reliability
Discrete Devices
FETs for Cell phone ECM
Thin-form package technology
Gold loop and new software (M loop)
Gold loop and new software
Earlier software: the chip and wire
were shorted together
WB loop height: 150 m maximum
reduced to 100 m maximum
Thinner island frame and improved frame bending process
SSFP
VSFP
SSFP
VSFP
1.4 1.4 0.6 mm
1.2 1.4 0.46 mm
1.2 1.4 0.34 mm
Fame
Fame
Fame
thickness
thickness
thickness
120
120 m
120 m
Thinner
Ultrathinner
Fame
Fame
Fame
thickness
thickness
thickness
70 m
70
70 m
Frame bend width
Frame bend width
130 m
100 m
Island frame thickness:
Reduced by 50 m !
Total reduction: 130 m !
Frame bending process:
Reduced by 80 m !
Establishment of and ultrathin wafer process (4 inch)
Introduction of B/G plus spin etching process!!
Factor workaround
Target thickness: 80 m
Target thickness: 80 m
Target thickness: 80 m
Spin etching process
B/G
Spin etching process
Spin etching
thickness: 40 m
thickness: 40 m
B/G process thickness: 350 m
80 m ultrathin wafer process
SANYO established an
by improving the wafer chamfering shape and introducing spin etching !!!
Total package height
SSFP
SSFP
VSFP
VSFP
Thinner
Ultrathinner
SANYO achieved extremely thin packages by combining of the above technologies.
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High signal-to-noise ratio technology
JFET noise component
Condenser microphone JFET structure
Drain pad
JFET
Protective
diode static
voltage
Source pad
workaround
20 m
Gold loop
Polysilicon resistor
transient characteristics
Gate sub
workaround
The high resistance polysilicon resistor (1 to 3 G ) used to stabilized the gate-source
potential accounts for a large portion of the JFET noise component.
Result
VTFP
VTFP
-106
-106.5
Smaller
-107
-107.5
-108
-108.5
Fame
Fame
Fame
thickness
thickness
thickness
70 m
70 m
70
-109
Larger
-109.5
Frame bend width
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
50 m
R GS (G )
Development
Improved signal-to-noise ratio due to p-channel MOSFET development
Input protection
V DD protection resistor
diode
GND
GND
GND
V DD
V DD
DD
Pch MOSFET
V IN
V IN
Input protection
resistor
L / W = 3 m / 1 mm
Effect
Noise voltage (dBV)
Insertion loss (dBV) Signal-to-noise ratio (dB)
Pch MOSFET
-113 to -114
-5.0 to -5.5
68 to 68.5
JFET
-105 to -107
-1.5 to -3.5
62 to 64
VTFP
VTFP
Potential stabilization time
0.5
Enhancement mode
0.4
P-ch MOSFET
Potential stabilization time
0.3
0.2
0.1
0
0
0.5
1
The potential stabilization time becomes under 1 second
in enhancement mode p-channel MOSFETs.
SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number
of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.
SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data
due to the inclusion of high pixel count cameras in this equipment.
Digital Cell Phone
Drain
Gate
Source
CDMA/TDMA (IS136)
0.14
2 G
0.12
25 G
90 G
0.10
0.08
0.06
0.04
0.02
0.00
0
2
4
6
8
10
Potential stabilization time (s)
V DD
300‰
V IN
1k‰
GND
Signal-to-noise ratio evaluation
P H S
1.5
2
2.5
3
Time (s)
0.8 GHz, 1.5 GHz
Inner antenna
Low-noise amplifier
Antenna switches(
GaAs MMIC)
SPM3212
SPM3215
Buffer amplifiers
SPM3220
EC3H10B
SPM3226
FS303
Filter
switches
FS304
Whip antenna
(GaAs MMIC)
SPM3212
SPM3220
Power amplifier
SPM3226
Antenna switch
Li-ion
(Pch MOS)
Battery
MCH6305/MCH6307
(Pch MOS)
ECH8603
ECH8601
ECH8603
Inner antenna
Ext.
Filter
Low-noise amplifier
Mixer
Diversity
switches
(GaAs MMIC)
SPM3212
Antenna
OSC(NPN BiP)
SPM3215
EC3H09B
SPM3220
EC3H07B
SPM3226
SBFP420B
Buffer amplifiers
(NPN BiP)
EC3H10B
FS303
FS304
Antenna switch
Duplexer
PA module
Filter
switches
for PCS and TDMA
SPM3212, SPM3220, SPM3226
Low-noise amplifiers
Inner antenna
EC3H07B
EC3H10B
SBFP405B SBFP420B
Antenna
SBFP540B
Buffer amplifiers
Diversity
switch
(NPN BiP)
EC3H07B
FS303
Antenna switches
SPM3212
SPM3215
SPM3220
SPM3226
Power amplifier
Li-ion battery
CPH3106(PNP Bip.),
CPH3106(PNP Bip.)
MCH3106(PNP Bip.)
MCH3106(PNP Bip.)
MCH6305(Pch MOS)
MCH6305(Pch MOS)
MCH6307(Pch MOS)
OSC(NPN BiP)
EC3H09B, EC3H07B
SBFP420B
Local switches
SPM3212
SPM3220
SPM3226
Baseband
logic
(Pch MOS)
MCH6305/MCH6307
ECH8603
Filter
switches
for TDMA
(GaAs MMIC)
SPM3211
SPM3212
Local switches
(GaAs MMIC)
Filter
switches
for TDMA
SPM3212
(GaAs MMIC)
SPM3220
SPM3212
SPM3226
SPM3220
SPM3226
Local switches
(NPN BiP)
SPM3212
SPM3220
SPM3226
OSC
EC3H09B
EC3H07B
SBFP420B
Baseband logic
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