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SANYO's Lineup of High-Reliability
Discrete Devices
Microwave Device Series
High-frequency silicon transistors for VCO
Size
Usage
Package
Type No.
(mm)
Oscillator
EC3H09B
ECSP
1.0
0.6
EC3H11B
ECSP
1.0
0.6
SPFP420B
ECSP
1.0
0.6
SPFP540B
ECSP
1.0
0.6
2SC5781
SSFP
1.4
0.8
2SC5783
SSFP
1.4
0.8
Buffer
EC3H07B
ECSP
1.0
0.6
EC3H10B
ECSP
1.0
0.6
2SC5646
SSFP
1.4
0.8
2SC5782
SSFP
1.4
0.8
Oscillator
FS301
(TR1 Side)
ECSP
1.2
0.8
+ Buffer
(TR2 Side)
FS303
(TR1 Side)
ECSP
1.2
0.8
(TR2 Side)
FS304
(TR1 Side)
ECSP
1.2
0.8
(TR2 Side)
GaAs MMIC products for Antenna switches, local switches and other switches
Size
Usage
Type No.
Package
(mm)
Switch
SPM3220
ECSP
1.2
0.8
SPM3226
ECSP
1.2
0.8
SPM3227
ECSP
1.2
0.8
SPM3211
MCPH6
2.1
2.0
SPM3212
MCPH6
2.1
2.0
SPM3215
MCPH6
2.1
2.0
SPM3501
MCPH6
2.1
2.0
SPM3211: Reverse control IC of SPM3212
SPM3215: Single control IC
SPM3226: Reverse control IC of SPM3227
Power MOSFETs+ Schottky Barrier Diodes for logic block
Size
V
Type No.
Package
(mm)
MCH5801
MCPH5
2.1
2.0
MCH5815
MCPH5
2.1
2.0
CPH5802
CPH5
2.8
2.9
CPH5811
CPH5
2.8
2.9
38
f
T
V
I
P
N
CEO
C
C
F
typ.
(V)
(mA)
(mW)
typ.(dB)
(GHz)
11.2
4
70
100
1.5
10.5
4
80
100
1.5
25
4.5
35
100
1.1
29
4.5
80
100
0.9
11.2
4
70
100
1.5
10.5
4
80
100
1.5
12.5
4
30
100
1.5
12.5
4
40
100
1.3
10
4
30
100
1.5
12.5
4
40
100
1.3
12.5
4
30
100
1.5
25
4.5
35
100
1.1
12.5
4
30
100
1.5
11.2
4
70
100
1.5
12.5
4
40
100
1.3
11.2
4
70
100
1.5
Control
Isolation
Insertion Loss
Pin1dB
Voltage
typ.(dB)
typ.(dB)
typ.(dBm)
(V)
**
**
3
16
0.5
26
**
**
2.4
to
5
18
0.35
22(2.8V)
**
**
2.4
to
5
18
0.35
22(2.8V)
**
**
3
16
0.55
28
**
**
3
16
0.55
28
3
**
13
**
1.1
26
3
13
1.0
20
** Measured frequency: 2.5 GHz
Measured frequency: 1 to 2.5 GHz
Measured frequency: 5.8 GHz
Measured frequency: 5 to 6 GHz
R
I
DS(on)
DSS
D
P
V
D
RRM
V
=2.5V
GS
(V)
(A)
(W)
(V)
max. (V)
max. ( )
20
1.5
0.8
280m
15
12
1.5
0.8
450m
15
20
2
0.9
200m
15
20
3
0.9
82m
15
As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower
power consumption in discrete devices are increasing even faster.
SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and
reduced parts counts in application circuits
Ultralow on-resintance Power MOSFETs for RF and logic block
Type No.
SCH1302
SCH2601(Pch)
2
S21e
Notes
(Nch)
typ.(dB)
SCH2602(Pch)
6
(Nch)
5
3LP03M
17
3LN03M
8.5
MCH3411
6
MCH6305
5
MCH6307
10.5
CPH6311
8.5
ECH8603
9.5
ECH8611
8.5
VEC2302
10.5
2SC5645
VEC2303
SBFP420
17
*VGS=4V,
VGS=1.8V
2SC5645
10.5
Low saturation voltage transistors for logic block
8.5
2SC5781
10.5
2SC5782
Type No.
2SC5781
8.5
15C01S
30C02S
SCH2101
Notes
SCH2201
0.4
to
2.5 GHz Use
SCH2503(PNP)
(NPN)
0.4
to
2.5 GHz Use
MCH3106
0.4
2.5 GHz Use
to
MCH3206
0.4
to
2.5 GHz Use
CPH3109
0.4
2.5 GHz Use
to
CPH3209
0.4
2.5 GHz Use
to
Up to 6 GHz Use
Schottky Barrier Diodes for logic block
Type No.
SS1003EJ
SB1003EJ
I
VF
R
max. ( A)
S0503SH
SS1003M
200
0.45
SB1003M
200
0.45
SBS004M
500
0.4
SBS808M
500
0.4
R
R
(on)
(on)
DS
DS
Size
V
DSS
Package
V
=4.5V
V
=2.5V
GS
GS
(mm)
(V)
Max. ( )
Max. (
SCH6
1.6
1.6
20
*0.165
0.22
SCH6
1.6
1.6
30
*1.9
2.8
30
*0.9
1.15
SCH6
1.6
1.6
12
0.31
0.47
30
*3.7
5.2
MCP
2.1
2.0
30
*1.9
2.8
MCP
2.1
2.0
30
*0.9
1.15
MCPH6
2.1
2.0
30
*90m
118m
MCPH6
2.1
2.0
20
65m
98m
MCPH6
2.1
2.0
12
46m
66m
CPH6
2.8
2.9
20
42m
60m
ECH8
2.8
2.9
20
54m
87m
ECH8
2.8
2.9
12
40m
65m
VEC8
2.8
2.9
30
168m
VEC8
2.8
2.9
12
49m
75m
Size
V
I
P
CEO
C
C
Package
(mm)
(V)
(A)
(W)
SMCP
1.6
1.6
15
0.6
0.2
SMCP
1.6
1.6
15
0.8
0.2
SCH6
1.6
1.6
12
0.8
0.4
SCH6
1.6
1.6
15
0.8
0.4
30
0.6
0.4
SCH6
1.6
1.6
30
0.6
0.4
MCPH3
2.1
2.0
12
3
0.8
MCPH3
2.1
2.0
15
3
0.8
CPH3
2.8
2.9
30
3
0.9
CPH3
2.8
2.9
30
3
0.9
V
I
I
Size
RRM
O
FSM
Package
(V)
(A)
(A)
(mm)
ECSP
1.6
0.8
30
1
5
ECSP
1.6
0.8
30
1
5
SCH6
1.6
1.6
30
0.5
5
MCPH6
2.1
2.0
30
1
5
1
MCPH6
2.1
2.0
30
5
MCPH3
2.1
2.0
15
1
10
MCPH5
2.1
2.0
15
1
10
R
(on)
DS
C
iss
V
=1.5V
Polarity
GS
typ(pF)
Max. ( )
0.39
Pch
410
Pch+Nch
40
30
Pch+Nch
0.67
160
7
Pch
40
Nch
30
Nch
270
Pch
680
98m
Pch
940
Pch
1230
Pch Dual
800
Pch Dual
1230
Pch Dual
510
107m
940
Pch Dual
h
V
FE
(sat)
CE
Porality
Min. to Max.
Max. (mV)
300
300 to 800
NPN
280
NPN
300 to 800
240
300 to 800
PNP
280
NPN+NPN
300 to 800
200 to 500
220
PNP+NPN
190
300 to 800
165
200 to 560
PNP
150
200 to 560
NPN
230
200 to 560
PNP
200 to 560
180
NPN
V
I
F
R
Notes
max. (V)
max. ( A)
0.45
360
0.55
15
0.47
120
0.45
15
15
0.55
0.4
500
0.43
90
Parallel type
39
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