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3.
How to set up
This chapter describes how to set up and connect jumpers. Please refer to the data sheet and
application notes of this product for the test conditions.
INPUT (VIN)
VIN terminal is connected to the positive of the power supply. Connect the positive terminal to VIN.
(Connect Ground (grounding) of the power supply side to the lower GND of VIN terminal.
OUTPUT (VOUT)
VOUT terminal is EVB output terminal. Connect the positive terminal of the load to VOUT terminal
(connect Ground (grounding) on the load side to the lower GND terminal of VOUT terminal).
OUTPUT (VOUT B)
VOUT B terminal is used when a MOSFET for reverse-current protection (RCB) is used. The gate-
voltage to drive MOS is supplied from EFET terminal described below.
VIN sense, GND sense, and VOUT sense and GND sense
These four terminals are used to accurately measure VIN or VOUT voltage by correcting the drop
voltage caused by the parasitic resistor of EVB. For example, when measuring the on-resistance between
VIN-VOUT terminals, measure the potential difference between VIN sense-VOUT sense terminals to
calculate Ron unaffected by the parasitic resistance
EN/UVLO
EN/UVLO pin selects EN (enable) and UVLO functions. During normal operation, the center and left
(EN) terminals are connected for use. To use UVLO function, connect the center and the right (UVLO)
terminal.
EFET
EFET is a terminal to be connected when RCB function is used. The right terminal of EFET symbol is
connected to EFET of the device. The left terminal of EFET notation (silk characters) is connected to
MOSFET gating terminal (in the default status, OPEN status because MOSFET is not installed). By
mounting MOSFET (mounting it later), it is possible to check RCB(Reverse Current Block) function.
dV/dT
dV/dT pin is used to adjust the rise time.
The rise-time is adjusted by the capacitance between dV/dT terminal and GND pin. Normally, 1nF and
max. 100nF are available.
ILIM
ILIM terminal is used to adjust the overcurrent limit.
Adjust the overcurrent limit using a resistor (R
can range from 20kΩ to 300kΩ.
R
ILIM
© 2023
Toshiba Electronic Devices & Storage Corporation
This is a reference material. Do not design the final equipment in this document.
TCKE8xx series Evaluation Board Instruction Manual
) between ILIM and GND terminals.
ILIM
4
2023-5-10
Rev.1.0
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