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FDD412A/B
1
WRITE
DATA-N
UJ
Lf
i
LI
|
Waveshape-arrer
if
ne
=
toe
conversion
(b)
ERASE
GATE
generation
To
use
the
erase
gate
system,
the
erase
head
starts
operating
a little
later
than
the
read/write
head.
WRITE
GATE-N
et
ee
OO
\
i
|
ERASE
GATE-N
|
1
saa
aa
— 580 us max.7—
200 us TYP
Fig.
2.20
ERASE GATE Generation
2.5.5
Data
Read
Operation
(1)
Interface
signals
Table 2.12
Data Read Interface
Signals
LOW
CURRENT-N|
Switches
read
amplifier
filter
Same
as
the
one
levels
between
outer
and
inner
used
in write
tracks.
operation.
Tracks
0%43
: 'H'
level
:
Tracks
4446:
'L'
level
MFM
GATE-N
FM/MFM
switch
signal
Required
for
FM mode
: 'H'
level
model
A FDD
alone
MFM
mode:
'L'
level
(with
VFO).
VFO
SYNC-N
Instructs
the
VFO
circuit
to
operate,
going
to
'L'
level
in
data
read operation.
DATA AREA-N
Goes
to 'L'
level
in reading
the
data
part,
during
which
time
the
VFO
is held
in synchronization.
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