Panasonic Schottky Barrier Diodes MA27D270G Specification Sheet

Schottky Barrier Diodes (SBD)
MA27D270G
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current I
R
• Optimum for high frequency rectification because of its short
reverse recovery time t
• SSS-Mini type 2-pin package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
= 25°C
a
Symbol Rating
V 20
R
V 20
RRM
I 200
FM
I 100
F(AV)
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
R
V I
F1 F
V I
F2 F
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
■ Package
• Code
• Pin Name
■ Marking Symbol: 8L
Unit
V
V
mA
mA
A
°C
°C
Conditions
= 10 V
R
= 10 mA
= 100 mA
= 0 V, f = 1 MHz
R
= I = 10 mA
R
= 10 mA, R = 100 Ω
L
Wave Form
Analyzer
(SAS-8130)
= 50 Ω
R
i
SKH00165AED
SSSMini2-F3
1: Anode
2: Cathode
Min Typ
0.38
0.54
11
1
Input Pulse
t
t
r p
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Max Unit
µA
0.3
0.44 V
0.58
pF
ns
Output Pulse
t
rr
t
= 10 mA
I
rr
= I = 10 mA
I
F R
= 100 Ω
R
L
1