Panasonic Schottky Barrier Diodes MA27E02 Specification Sheet

Schottky Barrier Diodes (SBD)
MA27E02
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible.
• Low forward voltage V
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
F
t
= 25°C
a
Symbol Rating
V 20
R
V 20
RM
I 35
F
I 100
FM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= 1 mA
V I
F1 F
= 35 mA
V I
F2 F
I V
R R
C V
t R
= 5 mA
r I
f F
Unit
V
V
mA
mA
°C
Marking Symbol: G
°C
Conditions
= 15 V
= 0 V, f = 1 MHz
SKH00129AED
+0.05
0.27 +0.05
0.13
–0.02
–0.02
2
1
0.60
±0.05
5°
SSSMini2-F2 Package
Min Typ Max
0.40
1.0
200
1.2
9
Unit: mm
1: Anode
2: Cathode
Unit
V
V
nA
pF
Ω
1