Panasonic Transistors 2SA0720 Specifications

Transistors
2SA0720
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1318
 Features
 Complementary pair with 2SC1318
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V –60
CBO
V –50
CEO
V –5
EBO
I –500
C
I –1
CP
P 625
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = –10 mA, I
CBO C
V I = –10 mA, I
CEO C
V I = –10 mA, I
EBO E
I V = –20 V, I
CBO CB
h * V = –10 V, I
FE1 CE
h V = –10 V, I
FE2 CE
V I = –300 mA, I
CE(sat) C
V I = –300 mA, I
BE(sat) C
f V = –10 V, I
T CB
C V = –10 V, I
re CB
Q R
85 to 170 120 to 240
SJC00415AED
 Package
 Code
TO-92B-B1
 Pin Name
1. Emitter
Unit
2. Collector
V
3. Base
V
V
mA
A
mW
°C
°C
Conditions Min
= 0 –60
E
= 0 –50
B
= 0
C
= 0
E
= –150 mA
C
= –500 mA
C
= –30 mA
B
= –30 mA
B
= 50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S
170 to 340
Typ Max Unit
–5
– 0.1
mA
85 340

40
– 0.35 – 0.60
–1.1 –1.5
200 MHz
6 15 pF
V
V
V
V
V
1